Nexperia MOSFETS
Nexperia offers a broad portfolio of N- and P-channel power MOSFETs, ranging from 12 V to 100 V, in space-saving and efficient package options including copper-clip LFPAK, small signal, automotive and application-specific technologies.
LFPAK P-Channel Trench MOSFETs
Nexperia LFPAK P-Channel Trench MOSFETs are designed and qualified to AEC-Q101 standards for use in high-performance automotive applications. These MOSFETs feature high thermal power dissipation capability. The P-channel MOSFETs are available in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package. These MOSFETs are suitable for thermally demanding environments due to the 175°C rating. Typical applications include reverse battery protection, power management, high-side load switch, and motor drive.
Single N-Channel Trench MOSFET, 60V
Nexperia presents the Single N-Channel Trench MOSFET (60V). This component has been efficiently designed with Trench MOSFET technology Features include fast switching, ESD protection, allowing current to flow vertically. It is logic level compatible, and boasts very fast switching, along with ESD protection greater than 2kV HBM.Additionally, this field-effect transistor (FET) is set in a small surface-mounted device plastic packaging. More Info.
Power MOSFETs
The performance and reliability of the MOSFETs in mains and battery powered applications are crucial. While technology advances continue to drive forward system efficiency and performance, in addition to fast and efficient switching, power MOSFETs for power supplies and industrial applications need to offer a growing range of features. More Info.
NextPowerS3 MOSFETs
A high-performance 25 V, 30 V and 40 V MOSFET platform incorporating Nexperia’s unique superjunction technology, with the copper-clip LFPAK package to deliver low RDS(on), as well as demonstrating a continuous current capability up to 380 A. More Info.
N-Channel Trench MOSFET - 100V
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. More Info.
Gallium Nitride Transistor MOSFETs
The Nexperia GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. More Info.
