Nexperia 2N7002 60V N-Channel Trench MOSFETs

Nexperia 2N7002 60V N-Channel Trench MOSFETs feature a Surface-Mounted Device (SMD) plastic package utilizing the Trench MOSFET technology. These MOSFETs are ideal for low-voltage, low-current applications and are ESD-protected. The 2N7002 60V N-channel Trench MOSFETs offer a maximum gate-source voltage of 30V and a maximum total power dissipation of 0.83W. These MOSFETs operate within a temperature range from -55°C to +150°C and are typically used in high-speed line drivers and low-side load switch applications.

Features

  • Fast switching
  • Optimal for logic-level gate drive sources
  • Package attached to the surface
  • Provides protection against ESD
  • Surface mounted package
  • Utilizes trench MOSFET technology

Applications

  • High-speed line driver
  • Low-side load switch
  • Relay driver
  • Switching circuits

Technical Specifications

Parameters Values
Maximum drain-source voltage 60V
Maximum gate-source voltage 20V
Maximum power dissipation 1330mW
Storage temperature range -65°C to +150°C

Video

This TTI Tech Specs video for Nexperia 2N7002 60V N-Channel Trench MOSFETs explains the features and technical specifications of the MOSFETs. The 2N7002 60V N-Channel Trench MOSFETs are made for low-voltage, low-current applications, including relay drivers and various switching tasks.

See video transcript below

Video Transcript

They say it's down in the trenches where work gets done. It’s never been truer than with Nexperia 2N7002NXAKR N-Channel Trench MOSFETs. These trench MOSFETs are single N-channel enhancement-mode field-effect transistors that deliver extremely fast switching using trench MOSFET technology for various applications, including relay drivers, high-speed line drivers, low-side load switches, and other switching circuits. A small SOT23 surface mount plastic housing provides a three-terminal configuration in a 1.9mm by 2.9mm by 1.3mm package with a maximum operating temperature of 150°C and superior electrostatic discharge protection. The 2N7002NXAKR MOSFET is rated for 60V with an on resistance of 3Ω and a max gate-to-source threshold voltage of 1.6V.

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