Nexperia Gallium Nitride FETs

Nexperia Gallium Nitride FETs are designed to offer superior power efficiency and fast switching capabilities by reducing power density by reducing conduction. Gallium nitride FETs provide ease of design freedom and improved reliability in power systems. The gallium nitride FETs provide flexibility and offer superior switching performance at an operating temperature range of -55°C to +175°C. Typically gallium nitride FET is used in servo motor drives, automotive onboard-charger systems, and bridgeless totem-pole power factor correction.

Features

  • Enhanced power density
  • Fast switching speeds
  • Flexibility in design implementation
  • Flexibility in power systems 
  • High efficiency
  • improved reliability and longevity

Applications

  • Automotive power electronics
  • Consumer electronics
  • Electric vehicle (EV) charging systems
  • Power supplies
  • Renewable energy systems
  • Telecommunications infrastructure

Technical Specifications

Parameters Values
Maximum drain current (ID) 60A
Maximum drain-source voltage (VDS 650V
Maximum total power dissipation (Pd) 394W
Number of transistors 1
Operating temperature range -55°C to +175°C

Video

This TTI Tech Specs video for the Nexperia Gallium Nitride FETs (GaN FETs) enhances power density by reducing conduction and switching losses. GaN FETs provide the best power efficiency and quick transition or switching capabilities.

See video transcript below

Video Transcript

Nexperia GaN FETs offer channel resistances as low as 7 milliohms, come in a wide range of packages including DFN, CCPAK, LGA, and TO-247, and they operate in temperature ranges from as low as negative 55 degrees to as high as positive 155 degrees Celsius. Depending on the application, engineers can choose from three main categories of GaN devices including low voltage e-mode that are ideal for low voltage applications, 650 volt e mode ideal for AC to DC power conversion, and 650 volt cascode ideal for EVs and other high frequency and high power applications. 

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