Nexperia 650V Gallium Nitride (GaN) Transistor MOSFETs
Nexperia 650V Gallium Nitride (GaN) Transistor MOSFETs offer high power density, high performance, and high switching frequency. These MOSFETs exhibit an ease of design freedom as well as improved reliability of power systems. The 650V Gallium Nitride (GaN) Transistor MOSFETs have an operating temperature range of -55°C to 175°C and have high electron mobility and exceptionally high switching frequency capability. These devices are used in next-generation power systems, such as electric vehicles (EVs) and renewable energy applications.
Features
- AEC-Q101 automotive qualification
- Easy solder wetting for strong mechanical joints
- High board-level reliability
- High gate threshold voltage for gate bounce immunity
- Lower inductances
- Low source-drain voltage in reverse conduction mode
- Reduced Rth(j-mb) for improved cooling
- Simple gate drive (0V to +10V or +12V)
- Transient over-voltage capability
- Ultra-low reverse recovery charge
- Visual (AOI) inspection
Applications
- Automotive DC-DC
- Automotive on-board-charger systems
- Bridgeless totem pole PFC
- Hard and soft-switching converters for industrial and datacom power
- PV and UPS inverters
- Servo motor drives
Technical Specifications
| Series | Drain-source voltage (V) |
Drain current (A) |
Total power dissipation (W) |
Junction temperature range (°C) |
Drain-source on-state resistance (mΩ) |
Datasheets |
|---|---|---|---|---|---|---|
| VDS | ID | Ptot | Tj | RDSon | ||
| GAN063-650WSA | 650 | 34.5 | 143 | -55 to 175 | 60 | GAN063-650WSA |
| GAN041-650WSB | 650 | 47.2 | 187 | -55 to 175 | 41 | GAN041-650WSB |
| GAN039-650NBB | 650 | 60 | 300 | -55 to 175 | 39 | GAN039-650NBB |
| GAN039-650NTB | 650 | 60 | 300 | -55 to 175 | 39 | GAN039-650NTB |
Video
This TTI Tech Specs video for Nexperia GaN MOSFETs Series explains that Nexperia cascode GaN FETs offer low on-resistance and exceptionally high switching frequency to enable high power density and high performance required in EVs and renewable energy applications, but they can still be easily driven using standard silicon MOSFET gate drivers. The 650 volt GaN FETs have RDS(ON) as low as 33 milliohms.
See video transcript below
Video Transcript
The race for speed in power systems is on, and if you aren’t using GaN FETs then are you in the race at all? Nexperia cascode GaN FETs offer low on-resistance and exceptionally high switching frequency to enable high power density and high performance required in EVs and renewable energy applications, but they can still be easily driven using standard silicon MOSFET gate drivers.
The 650 volt GaN FETs have RDS(ON) as low as 33 milliohms. They’re available in a standard TO-247 package as well as Nexperia’s compact and low-profile CCPAK copper clip package. Its construction offers ultra-low package resistance and eliminates bond wires for low inductance. It also has low thermal resistance and options for top-side and bottom-side cooling. Nexperia GaN FETs are available in industrial grade or AEC-Q101 qualified automotive grade variants. Nexperia GaN FETs are available in industrial grade and soon will be available in automotive grade variants as well.
