Nexperia BUK6D385 100V N-Channel Trench MOSFETs are enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. These MOSFETs feature side wettable flanks for optical solder inspection and is ESD protected. The MOSFETs operates at 100V drain-source voltage, 3.7mA drain current, and -55°C to 175°C temperature range. Typical applications include switching circuits, relay drivers, low-side load switches, and high-speed line drivers.
Nexperia BUK6D385 100V N-Channel Trench MOSFETs
Features
- Extended temperature range of 175°C
- Electrostatic Discharge (ESD) protection more than 2kV HBM (class H2)
- Qualifed for AEC-Q101
- Side wettable flanks for optical solder inspection
- Trench MOSFET technology
Applications
- High-speed line driver
- Low-side load switch
- Relay driver
- Switching circuits