Nexperia P-Channel Trench MOSFETs
Nexperia offers a variety of P-Channel Trench MOSFETs. This includes the Nexperia LFPAK P-Channel Trench MOSFETs, which are designed and qualified to AEC-Q101 standards for use in high-performance automotive applications. These MOSFETs feature high thermal power dissipation capability. There are over 400 product types, ranging from 20V to 100V, housed in market-leading robust package technologies including wettable flanks for Automatic Optical Inspection (AOI). Nexperia P-channel MOSFETs are available in a variety of packages including the LFPAK56, SOT-23, DFN2020MD-6, DFN1006-3, DFN1110D-3, SC-70, TSOP6, and TSSOP6. These MOSFETs are suitable for thermally demanding environments due to the 175°C rating. Typical applications include reverse battery protection, power management, high-side load switch, and motor drive.
Features
- AEC-Q101 qualified
- Available with high thermal power dissipation capability
- Comes with trench MOSFET technology
- Designed to withstand harsh operating conditions
- Enhanced thermal performance using advanced packaging and materials
- Suitable for thermally demanding environments due to 175°C rating
Applications
- Audio amplifiers
- Automotive electronics
- LED lighting
- Motor control
- Power supplies
- Protection circuits
- Wireless charging
Technical Specifications
| Parameters | Values |
|---|---|
| Maximum drain-source breakdown voltage | 300V |
| Operating temperature range | -65°C to +150°C |
| Maximum continuous drain current | 98.6A |
| Maximum drain-source resistance | 140Ω |
| Maximum power dissipation | 110W |
Video
This TTI Tech Spec Video on Nexperia P-Channel Trench MOSFETs shows that these devices are AEC-Q101 qualified and designed to withstand harsh operating conditions. These components offer a maximum continuous drain current of 98.6A, a maximum drain-source breakdown voltage of 300V, and a maximum power dissipation of 110W.
See video transcript below
Video Transcript
Getting your kids to eat their veggies is like making holes move through a P-channel MOSFET; you're just met with a lot of resistance. Nexperia P-Channel Trench MOSFETs incorporate trench MOSFET technology to deliver low drain-source ON resistance in high-performance automotive applications with AEC-Q101 standards. Designed to withstand harsh operating conditions, the P-channel trench MOSFETs include enhanced thermal performance using advanced packaging and material with a 175°C rating.
High thermal power dissipation capability options are also available. Over 400 product types between 20V and 100V provide solutions for a range of applications, including power management, motor control, audio amplifiers, protection circuits, and more. P-Channel Trench MOSFET products feature a maximum continuous drain current of 98.6A, a maximum drain-source breakdown voltage of 300V, and a maximum power dissipation of 110W.
