Nexperia LFPAK88 Automotive MOSFETs
Nexperia LFPAK88 Automotive qualified N-channel MOSFETs using the latest Trench 9 low ohmic super junction technology, housed in a copper-clip LFPAK88 package. These MOSFETs provide an alternative to D²PAK by delivering an industry-leading power density in an innovative 8mm x 8mm footprint. These MOSFETs have a 2x higher continuous current rating, ultimate thermal performance, and reliability, and up to 60% space efficiency. The LFPAK88 MOSFETs operate from -55°C to +175°C temperature range. Typical applications include high-power motors, lamps, solenoid control, and reverse polarity protection.
Features
- Fully automotive qualified beyond AEC-Q101
- -55°C to +175°C rating suitable for thermally demanding environments
- LFPAK88 package
- Designed for a smaller footprint and improved power density over older wire bond packages such as D2PAK for today’s space-constrained high-power automotive applications
- The thin package and copper clip enable LFPAK88 to be highly efficient thermally
- LFPAK copper clip technology enables improvements over wire bond packages by
- Increased maximum current capability and excellent current spreading
- Improved RDS(on)
- Low source inductance
- Low thermal resistance Rth
- LFPAK Gull Wing leads
- Easy solder wetting for good mechanical solder joint
- Flexible leads enable high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Unique 40V Trench 9 super junction technology
- Improved SOA and avalanche capability compared to standard TrenchMOS
- Reduced cell pitch and super junction platform enable lower RDSon in the same footprint
- Tight VGS(th) limits enable easy paralleling of MOSFETs
Applications
- Automotive:
- ABS braking
- DC/DC conversion
- e-fuse
- Motor control
- Power steering
- Reverse battery protection
- Industrial:
- Battery isolation
- Battery-powered tools
- e-fuse motor control
- Mobility and off-road traction in e-bikes, e-scooters, and wheelchairs
- Power supply equipment
- Telecom infrastructure
Technical Specifications
| Parameters | Value |
|---|---|
| Drain-source breakdown voltage (Vds) | 40V to 43V |
| Gate-source threshold voltage (Vgs(th)) | 2.4V to 4.3V |
| Continuous drain-current (Id) | 140A to 500A |
| Power dissipation (Pd) | 135W to 375W |
| Fall time | 11ns to 48ns |
| Rise time | 8.5ns to 33ns |
