Nexperia SiC 1200V MOSFETs
Nexperia Silicon Carbide (SiC) 1200V MOSFETs are available in both the conventional 3-pin TO-247-3 and the 4-pin TO-247-4 which includes an additional Kelvin source pin. These SiC MOSFETs provide high short-circuit ruggedness, quick switching, and excellent RDSon temperature stability. Nexperia SiC MOSFETs offer a very fast and robust intrinsic body diode. Nexperia SiC MOSFETs feature fast reverse recovery, drain current as high as 80A and an operating temperature range from -55°C to +175°C. Typical applications include motor drives, photovoltaic inverters, E-vehicle charging infrastructure, and switch mode power supplies.
Features
- Excellent gate charge and beneficial gate charge ratio:
- High resistance to parasitic turn-on
- Minimal power consumption of gate drivers
- Exceptionally low switching loss
- Quick reverse recovery
- Rapid switching speed
- Strong and incredibly quick intrinsic body diode
- Superior RDSon temperature dependency
- Very tiny voltage threshold tolerance
Applications
- E-vehicle charging infrastructure
- Motor drives
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
Technical Specifications
| Parameters | Values |
|---|---|
| Maximum drain-source voltage | 1200V |
| Maximum gate-source voltage | 22V |
| Operating temperature range | -55°C to +175°C |
| Packaging | TO-247-3 TO-247-4 |
| Power dissipation range | 202W to 319W |
Video
Nexperia SiC MOSFETs deliver greater power density and efficiency with a rise time as low as 13 nanoseconds and a fall time as low as 8 nanoseconds. The superior on resistance temperature stability has an increase of just 38% between 25 and 175 degrees celsius. A high resistance to parasitic turn-on, a strong intrinsic body, and a threshold voltage under 22 volts for a drain source of up to 1200 volts.
View video transcript below
Video Transcript
When a town in America needs a hero, there’s always a man in a suit and tie ready to switch in the blink of an eye into a superhero and keep the evil powers at bay. And when in need of switching speeds faster than a speeding bullet, the world’s best on resistance temperature stability silicon carbide MOSFETs, by Nexperia, deliver greater power density and efficiency with a rise time as low as 13 nanoseconds and fall time as low as 8 nanoseconds.
The superior on resistance temperature stability has an increase of just 38% between 25 and 175 degrees Celsius. A high resistance to parasitic turn-on, a strong intrinsic body, and a threshold voltage under 22 volts for a drain-source of up to 1200 volts make these a superb solution in EV charging infrastructure, photovoltaic inverters, motor drives, and switch mode power supplies.
