YAGEO XSemi N- and P-Channel Power MOSFETS
YAGEO XSemi N- and P-Channel Power MOSFETs, part of the XP Series, include PMPAK-8, TO-220CFM-3, SO-8 and SOT-23S-3 package options designed for high efficiency and fast switching. These silicon enhancement mode devices deliver ultra-low on-resistance and reliable operation up to +150°C. RoHS-compliant and halogen-free, these power MOSFETs support DC/DC converters, switching power supplies and commercial-industrial applications.
N-Channel PMPAK-8 MOSFETs
YAGEO XSemi N-Channel PMPAK-8 MOSFETs are silicon technology, enhancement mode power MOSFETs. Delivering ultra-low on-resistance and fast switching performance, these MOSFETs are available in 1- or 2-channel configurations and operating from -55°C to +150°C. They support high-performance power designs, including DC/DC converters and other demanding low-voltage applications.
N-Channel TO-220CFM-3 MOSFETs
YAGEO XSemi N-Channel TO-220CFM-3 MOSFETs are silicon technology enhancement mode power MOSFETs, providing low on-resistance with fast switching performance. These MOSFETs are available for a wide range of power applications and commercial-industrial through-hole applications.
P-Channel SO-8 MOSFETs
YAGEO XSemi P-Channel SO-8 MOSFETs are silicon technology enhancement mode power MOSFETs, providing low on-resistance with fast switching performance. These MOSFETs have a drain-source voltage of -30V with one -40V version available, and a drain-source breakdown voltage of -30V with one -40V version available. They support commercial-industrial surface mount and low-voltage applications, including DC/DC converters.
P-Channel SOT-23S-3 MOSFETs
YAGEO XSemi P-Channel SOT-23S-3 MOSFETs are silicon technology, enhancement mode power MOSFETs designed for high efficiency and fast switching. These compact MOSFETs deliver ultra-low on-resistance and are ideal for commercial-industrial surface mount designs. They support low-voltage applications such as DC/DC converters.
