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YAGEO XSemi N-Channel TO-220CFM-3 MOSFETs

YAGEO XSemi N-Channel TO-220CFM-3 MOSFETs are silicon technology, enhancement mode power MOSFETs. These MOSFETs provide the lowest possible on-resistance with fast switching performance. They are available for a wide range of power applications and are ideal for commercial-industrial through-hole applications.

Features

Fast switching performance
Halogen-free
Lowest possible on-resistance
RoHS compliant
Simple drive requirement

Applications

Commercial and industrial through hole applications
Low voltage applications

Technical Specifications

Parameters	Values
Drain-source voltage	60V, 100V, 500V, 600V, or 650V
Gate-source voltage	±20V or ±30V
Pulsed drain current	15A, 28A, 40A, 48A, 180A, 300A, or 380A
Single pulse avalanche energy	12.5mJ, 18mJ, 32mJ, 80mJ, 125mJ, 180mJ, 211mJ, 300mJ
Storage temperature range	-55°C to +150°C
Operating junction temperature range	-55°C to +150°C