YAGEO XSemi P-Channel SO-8 MOSFETs
YAGEO XSemi P-Channel SO-8 MOSFETs are silicon technology, enhancement mode power MOSFETs that are part of the XP Series. These MOSFETs provide the lowest possible on-resistance with fast switching performance. They have a drain-source voltage of -30V with one -40V version available, and drain-source breakdown voltage of -30V with one -40V version available. P-Channel SO-8 package MOSFETs are ideal for commercial-industrial surface mount applications and for low-voltage applications such as DC/DC converters.
Features
- Fast switching performance
- Halogen-free
- Low gate charge versions available
- Lowest possible on-resistance
- RoHS compliant
- Simple drive requirement
Applications
- Commercial-industrial surface mount applications
- DC/DC converters
- Low voltage applications
Technical Specifications
| Parameters | Values |
|---|---|
| Drain-source voltage | -30V or -40V |
| Gate-source voltage | ±16V, ±20V, or ±25V |
| Pulsed drain current | 30A, 40A, or 50A |
| Single pulse avalanche energy | 16.2mJ or 28.8mJ |
| Operating junction storage temperature | -55°C to +150°C |
| Drain-source breakdown voltage | -30V or -40V |
