Toshiba SiC MOSFETs Deliver Reliable
High-Speed Switching
Speed in delivery and power efficiency are game-changers in the industry today. Toshiba’s family of SiC MOSFETs delivers both precise and dependable switching, reduced power dissipation and superior operation in high-temperature environments.
You can depend on Toshiba SiC MOSFETs in higher voltage applications to deliver low on-resistance properties and equipment downsizing with new SiC materials.
TW070J120B SiC MOSFETs
Toshiba’s TW070J120B SiC MOSFET features a built-in SiC Schottky barrier diode with low diode forward voltage of -1.35 V (typ.), high voltage of 1200 V and an enhancement mode.
Super Junction MOSFETs
Toshiba’s TK49N65W5 Series MOSFETs, used for switching power supply and inverter motor applications, offer a fast reverse recovery time of 145 ns (typ.) and easy-to-control gate switching.
TLP7920 Isolation Amplifiers
Toshiba’s TLP7920 Series Photocouplers are designed for current sensing in electronic motor drives and offer extremely stable operation in noisy environments at -40°C to 105°C.
MOSFETS Selection Guide
Check out Toshiba’s full line of small signal and power MOSFETS.
Reference Design: An Isolated
Bidirectional DC-DC Power Supply
Read how Toshiba is using SiC MOSFETS to improve the
efficiency of power supply systems.
Reference Design: PFC Circuit
for 3-Phase 400V AC Input
Toshiba is developing higher efficiency and
miniaturization of power conversion applications.