Rohm Semiconductor SCS SiC Schottky Barrier Diodes
Rohm Semiconductor Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) have low total capacitive charge, reducing switching loss when enabling high-speed switching operation. The diodes are available in SCS2 (2nd generation) and SCS3 (3rd generation) variants. These diodes retain constant characteristics despite the rise in temperature, resulting in better performance when compared to other silicone-based fast-recovery diodes. The SiC diodes provide higher efficiency and have high surge resistance, making them ideal in PFC circuits. The SCS3 variants offer greater surge current capability while further reducing the forward foltage when compared to it 2nd generation counterpart. SCS2 and SCS3 Schottky barrier diodes are ideal for Power Factor Correction (PFC) circuits, like those PCs, servers, and ACs.
Features
- High-speed switching
- Low switching loss
- Reduced temperature dependence
- Shorter recovery time
Applications
- EV chargers
- PFC circuits:
- ACs
- PCs
- Servers
- Solar inverters
- Switch-mode power supplies
- UPS
Technical Specifications
| Parameters | Values |
|---|---|
| Reverse voltage | 650V to 1200V |
| Continous forward current range | 2A to 40A |
| Total power dissipation range | 22W to 420W |
| Maximum junction temperature | 175°C |
- Rohm Semiconductor SCS210AJ SiC Schottky Barrier Diodes Datasheet & Specifications (PDF)
- Rohm Semiconductor SCS310AM SiC Schottky Barrier Diodes Datasheet & Specifications (PDF)
- Rohm Semiconductor SiC Schottky Barrier Diodes White Paper (PDF)
- Search All ROHM Semiconductor Schottky Diodes & Rectifiers
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