Vishay SiC Schottky Diodes

Vishay SiC Schottky Diodes support high-speed hard switching performance and maintain stable operation across a wide temperature range. These devices combine high ruggedness with minimal switching losses, making them suitable for power conversion systems. The SiC Schottky Diodes feature a forward current of 2A and reverse voltage of 1200V. These devices come with a reverse leakage current of 5μA and a capacitive charge of 13nC. Applications include bootstrap diodes, anti-parallel diodes, and in AC/DC and DC/DC converters.

Features

• Comparative tracking index for insulation strength
• High CTI molding compound for electrical insulation
• Material compliance categorization
• Minimum creepage distance guaranteed by design
• MPS structure for ruggedness against surge events
• Positive VF temperature coefficient for paralleling
• Temperature-invariant switching behavior
• Virtually no recovery tail and no switching losses

Applications

• AC/DC converters
• Anti-parallel diodes
• Bootstrap diodes
• DC/DC converters

Technical Specifications