Vishay MaxSiC MOSFETs
Vishay MaxSiC MOSFETs offer fast switching speed, low on-resistance, high current capability, and good thermal performance for reliable operation in demanding industrial environments. These MOSFETs are optimized to improve system efficiency, power density, and overall performance in high-power systems. The MaxSiC MOSFETs feature a drain-source voltage rating of up to 1200V and are designed to withstand short-circuit conditions. These components support a maximum junction temperature of 175°C and a maximum drain current of 51A. Typical applications include DC/DC converters, solar inverters, UPS, and energy storage systems.
Features
- Fast switching speed
- Lead-free and halogen-free
- Low on-resistance
- Low output capacitance
- RoHS compliant
- Short-circuit withstand capability
Applications
- Auxiliary drives
- DC/DC converters
- Energy storage systems
- Solar inverters
- UPS
Technical Specifications
| Parameters | Values |
|---|---|
| Maximum Drain Source Breakdown Voltage | 1200V |
| Maximum Single Pulse Avalanche Energy | 540mJ |
| Maximum Junction Temperature | 175°C |
| Maximum Drain Current | 51A |
| Maximum Short Circuit Withstand Time | 3μs |