Vishay MaxSiC MOSFETs

Vishay MaxSiC MOSFETs offer fast switching speed, low on-resistance, high current capability, and good thermal performance for reliable operation in demanding industrial environments. These MOSFETs are optimized to improve system efficiency, power density, and overall performance in high-power systems. The MaxSiC MOSFETs feature a drain-source voltage rating of up to 1200V and are designed to withstand short-circuit conditions. These components support a maximum junction temperature of 175°C and a maximum drain current of 51A. Typical applications include DC/DC converters, solar inverters, UPS, and energy storage systems. 

Features

  • Fast switching speed 
  • Lead-free and halogen-free
  • Low on-resistance
  • Low output capacitance
  • RoHS compliant
  • Short-circuit withstand capability

Applications

  • Auxiliary drives
  • DC/DC converters
  • Energy storage systems
  • Solar inverters
  • UPS

Technical Specifications

Parameters Values
Maximum Drain Source Breakdown Voltage 1200V
Maximum Single Pulse Avalanche Energy 540mJ
Maximum Junction Temperature 175°C
Maximum Drain Current 51A
Maximum Short Circuit Withstand Time 3μs