Rohm Semiconductor Silicon Carbide (SiC) MOSFETs

Rohm Semiconductor SiC MOSFETs minimize ON-resistance increases, enabling smaller packages and greater energy savings than silicon (Si) devices. The 4th Gen SiC MOSFETs contribute to drastic reductions in system size and power consumption in various applications. SiC MOSFETs are available in voltages ranging from 650V to 1700V. They are available with a driver source pin that maximizes SiC switching performance. These SiC MOSFETs support a total power dissipation range from 35W to 427W and a drain current range from 3.7A to 118A. Typical applications include traction inverters, onboard chargers, PV inverters, and EV charging stations.

Features

• Achieves industry-leading low ON resistance with improving short-circuit ruggedness
• AEC-Q Automotive qualified parts available
  
• Available packages: TO-247-4L, TO-247N, TO-263-7L, TO-263-7LA, TO-268-2L, TO-3PFM
  
• Available surface mount, through-hole, or modules
• Available with a driver source to maximize switching performance
• Eval boards available
• Fast reverse recovery
• Fast switching speed
• Minimizes switching loss by drastically reducing parasitic capacitance

Applications

• EV charging station
• Motor drives
  
• Onboard charger for EV
• Solar power inverter (PV inverter)
• Switch Mode Power Supplies (SMPS)
  
• Traction inverters

Technical Specifications