Rohm Semiconductor Silicon Carbide (SiC) MOSFETs

ROHM Semiconductor SiC MOSFETs reduce ON-resistance, enabling smaller packages and greater energy savings. The 4th Gen SiC MOSFETs deliver improved efficiency and reduced losses for high performance power conversion in demanding systems. These SiC MOSFETs are available in voltage ratings from 650V to 1700V and offer high short circuit tolerance with improved efficiency across wider operating ranges. The components support power dissipation from 35W to 427W and drain current from 3.7A to 118A. Typical applications include traction inverters, onboard chargers, PV inverters, and EV charging stations.

Features

• Achieves industry-leading low ON resistance with improving short-circuit ruggedness
• AEC-Q Automotive qualified parts available
  
• Available packages: TO-247-4L, TO-247N, TO-263-7L, TO-263-7LA, TO-268-2L, TO-3PFM
  
• Available surface mount, through-hole, or modules
• Available with a driver source to maximize switching performance
• Eval boards available
• Fast reverse recovery
• Fast switching speed
• Minimizes switching loss by drastically reducing parasitic capacitance

Applications

• EV charging station
• Motor drives
  
• Onboard charger for EV
• Solar power inverter (PV inverter)
• Switch Mode Power Supplies (SMPS)
  
• Traction inverters

Technical Specifications