Rohm Semiconductor RS7 and RY7 Power MOSFETs
ROHM Semiconductor RS7 and RY7 Power MOSFETs are designed for low on-resistance and fast switching. These MOSFETs incorporate a durable high-power package and feature Pb-free plating, are RoHS-compliant, and are built using halogen-free materials. The RS7 and RY7 Power MOSFETs operate within a temperature range of -55°C to +175°C and a drain-source voltage of 100V. These component is 100% tested for Rg and UIS to ensure high reliability and performance. Typical applications include DC/DC converters, switching, hot swap controllers, and motor drives.
Features
- 100% tested for Rg and UIS
- Designed with high-power packages
- Halogen-free materials
- Low on-resistance for efficient performance
- Pb-free plating with RoHS compliance
Applications
- DC/DC converters
- Hot swap controller
- Motor drives
- Switching
Technical Specifications
| Parameters | Values | |
|---|---|---|
| RS7 | RY7 | |
| Drain Source Voltage | 100V | |
| Power Dissipation | 160W to 217W | 340W |
| Operating Temperature Range | -55°C to +175°C | |
| Gate Source Voltage | ±20V | |
| Continuous Drain Current Range | ±200A | ±300A |
Video
This TTI Tech Specs video for ROHM Semiconductor RS7 and RY7 Power MOSFETs highlights ROHM Semiconductor RS7 and RY7 Power MOSFETs, designed for low on-resistance and fast switching, with 100% testing for Rg and UIS to ensure high reliability and performance.
See video transcript below
Video Transcript
Ever try opening a stubborn jar but your hand keeps slipping around the lid? That’s like a power stage with too much loss, but ROHM’s RS7P200BM and RY7P250BM power MOSFETs target low on-resistance, minimizing loss whether you’re powering a jar opener or a DC to DC converter. oth MOSFETs feature a 100V VDS and wide SOA capability, supporting reliable operation during high inrush current such as hot swap controller of AI servers. RS7P200BM is rated for continuous drain current up to plus or minus 200A with a 4mΩ RDSon and power dissipation up to 217W, while the RY7P250BM is rated for up to plus or minus 300A with a 1.86mΩ RDSon and power dissipation up to 340W. Both feature a durable high-power package design with low thermal resistance for effective heat extraction and reliable operation at temperatures from -55°C to +175°C. They operate with a plus 10V VGS and offer fast switching capability.
