ROHM Semiconductor Discrete IGBTs are automotive-grade devices designed for switching applications requiring low conduction and switching losses. These IGBTs feature field-stop trench and hybrid IGBT structures with built-in SiC Schottky barrier diodes, low collector-emitter saturation voltage, and very fast, soft recovery characteristics. The Discrete IGBTs provide an 8μs short-circuit withstand time and are qualified to AEC-Q101. Typical applications include AC/DC inverters, electric vehicles, on-board and off-board chargers, portable welding machines, switching power supplies, and trains.
Rohm Semiconductor Discrete IGBTs
Features
- AEC-Q101 qualified
- Built-in SiC Schottky barrier diode
- Low collector-emitter saturation voltage
- Short-circuit withstand time of 8μs
- Very fast, soft-recovery FRD
Applications
- AC/DC inverters
- Electric Vehicles (EVs)
- On and Off board chargers
- Portable welding machines
- Switching power supplies
- Trains