ROHM offers a broad range of automotive-grade field stop trench IGBTs and Hybrid IGBTs with built-in SiC Schottky diodes that makes it possible to select the right product based on set requirements. Original trench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) with reduced switching loss.
Rohm Semiconductor ROHM Discrete IGBT’s
Features
- Hybrid IGBT with Built-In Silicon Carbide (SiC) Schottky Barrier diode (SBD)
- Low Collector - Emitter Saturation Voltage
- Short-Circuit Withstand Time of 8μs
- Qualified to AEC-Q101
- Built-in Very Fast & Soft Recovery FRD
Applications
- On & Off Board Chargers
- Electric vehicles (EVs)
- Trains
- Portable welding machines
- DC/AC inverters
- Switching power supplies.