Nexperia PMDPBx Dual N-Channel Trench MOSFETs
Nexperia PMDPBx Dual N-Channel Trench MOSFETs are designed for high-performance switching and power management applications. These MOSFETs are housed in a compact DFN2020 package and feature low on-state resistance and low gate charge, which minimize conduction and switching losses. The N-channel trench MOSFETs offer a dual configuration in a small footprint, save board space, and simplify circuit design, providing a reliable and efficient solution for portable and power-constrained devices. Typical applications include DC-DC conversion, load switching, and high-speed line drivers.
Features
- Dual N-channel configuration
- Low on-state resistance and threshold voltage
- Small and leadless packages
- Trench MOSFET technology
- Very fast switching
Applications
- DC to DC conversion
- High-speed line driver
- Low-side load switch
- Switching circuits
Technical Specifications
| Parameters | Series | ||
|---|---|---|---|
| PMDPB56XNEA | PMDPB95XNE2 | PMDPB30XNA | |
| Maximum drain-source voltage | 30V | 30V | 20V |
| Drain current | 3.1A | 3A | 12A |
| Maximum gate-source voltage | ±12V | ||
| Total power dissipation | 1.15W | 0.51W | 1.6W |
| Maximum junction temperature | +150°C | ||