Nexperia PMDPBx Dual N-Channel Trench MOSFETs

Nexperia PMDPBx Dual N-Channel Trench MOSFETs are designed for high-performance switching and power management applications. These MOSFETs are housed in a compact DFN2020 package and feature low on-state resistance and low gate charge, which minimize conduction and switching losses. The N-channel trench MOSFETs offer a dual configuration in a small footprint, save board space, and simplify circuit design, providing a reliable and efficient solution for portable and power-constrained devices. Typical applications include DC-DC conversion, load switching, and high-speed line drivers.

Features

  • Dual N-channel configuration
  • Low on-state resistance and threshold voltage
  • Small and leadless packages
  • Trench MOSFET technology
  • Very fast switching

Applications

  • DC to DC conversion
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Technical Specifications

Parameters Series
PMDPB56XNEA PMDPB95XNE2 PMDPB30XNA
Maximum drain-source voltage 30V 30V 20V
Drain current 3.1A 3A 12A
Maximum gate-source voltage ±12V
Total power dissipation 1.15W 0.51W 1.6W
Maximum junction temperature +150°C