Nexperia NSF Series SiC MOSFETs
Nexperia NSF Series SiC (Silicon Carbide) MOSFETs feature very low switching losses, fast reverse recovery, and fast switching speeds. They also have temperature independent turn-off switching losses and very fast and robust intrinsic body diodes. Additionally, these MOSFETs have a low leakage current of up to 1200V, an ultra small threshold voltage tolerance, and a robust body diode with very low forward voltage. NSF Series MOSFETs are used for e-vehicle charging infrastructure, motor drives, photovoltaic inverters, switch mode power supplies, and uninterruptable power supplies.
Features
- Excellent RDSon (drain-source on-state resistance) temperature dependency
- Fast reverse recovery and switching speed
- High efficiency and reliability
- Robust body diode with very low forward voltage
- Ultra small threshold voltage tolerance
Applications
- E-vehicle charging infrastructure
- Motor drives
- Photovoltaic inverters
- Switch mode power supplies
- Uninterruptable power supplies
Technical Specifications
| Parameters | Values | |
|---|---|---|
| Drain-Source Voltage | 1200V | |
| Gate-Source Voltage Range | -10V to 22V | |
| Drain Current Range | Tc = 25°C | 33A to 67A |
| Tc = 100°C | 25A to 47A | |
| Peak Drain Current | Pulsed; tp limited by Tj (maximum) | 80A or 160A |
| Drain-Source On-State Resistance Range | 30mΩ to 120mΩ | |
