Nexperia NGW Series IGBTs

Nexperia NGW Series Insulated-Gate Bipolar Transistors (IGBTs) offer low conduction and switching losses and are fully rated as a soft, fast reverse recovery diode. These IGBTs are RoHS-compliant and have lead-free plating. The Nexperia NGW series IGBTs have a combined carrier-stored trench-gate and field-stop (FS) structure. These IGBTs are optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.

Features

  • Fully rated as a soft, fast-recovery diode
  • Lead-free plating
  • Minimal conduction and switching losses
  • RoHS compliant
  • Stable, well-defined parameters for efficient parallel operation

Applications

  • EV charging
  • Induction heating
  • Motor drives for industrial and consumer appliances
  • Photovoltaic (PV) strings
  • Power inverters
  • Uninterruptible Power Supply (UPS) inverter
  • Welding

Technical Specifications

Parameters Values
Maximum short circuit withstand time 5μs
Maximum collector-emitter voltage 600V
Maximum peak pulse collector current 90A
Maximum peak pulse diode current 90A
Maximum junction temperature 175°C