Nexperia NGW Series IGBTs
Nexperia NGW Series Insulated-Gate Bipolar Transistors (IGBTs) offer low conduction and switching losses and are fully rated as a soft, fast reverse recovery diode. These IGBTs are RoHS-compliant and have lead-free plating. The Nexperia NGW series IGBTs have a combined carrier-stored trench-gate and field-stop (FS) structure. These IGBTs are optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.
Features
- Fully rated as a soft, fast-recovery diode
- Lead-free plating
- Minimal conduction and switching losses
- RoHS compliant
- Stable, well-defined parameters for efficient parallel operation
Applications
- EV charging
- Induction heating
- Motor drives for industrial and consumer appliances
- Photovoltaic (PV) strings
- Power inverters
- Uninterruptible Power Supply (UPS) inverter
- Welding
Technical Specifications
| Parameters | Values |
|---|---|
| Maximum short circuit withstand time | 5μs |
| Maximum collector-emitter voltage | 600V |
| Maximum peak pulse collector current | 90A |
| Maximum peak pulse diode current | 90A |
| Maximum junction temperature | 175°C |