Toshiba XPQ L-TOGL MOSFETs
Toshiba XPQ Series L-TOGL MOSFETs have a trench structure and U-MOS X-H process to achieve low on-resistance and high-speed switching performance. These devices include Kelvin source terminals that decrease switching losses and a thick backside metal layer that enhances thermal management. The package features gull-wing leads, which enhance mounting reliability and provide higher resistance to thermal cycling. These AEC-Q101 qualified components operate within a temperature range from -55°C to +175°C and have drain-source voltage ratings of 40V, 60V, and 100V. The XPQ L-TOGL MOSFETs are ideal for industrial equipment, motor drives, server power supplies, and switching power supplies.
Features
- AEC-Q101 qualified
- Gull-wing leads
- Kelvin source terminals
- Low gate charge
- Low input capacitance
- Low on-resistance
- Silicon N-channel
- Thick backside metal
- Trench structure with U-MOS X-H process
Applications
- Industrial equipment
- Motor drives
- Server power supplies
- Switching power supplies
Technical Specifications
| Parameters | Values |
|---|---|
| Drain-Source Voltage | 40V, 60V, and 100V |
| Operating Temperature Range | -55°C to +175°C |
| Gate-Source Voltage | ±20 |
| Power Dissipation | 750W |
| Drain Current Range | 300A to 400A |
Video
This TTI Tech Specs video for Toshiba XPQ Series L-TOGL MOSFETs explains that they feature a trench structure process called U-MOS X-H to achieve low on-resistance and high-speed switching performance. These AEC-Q101 qualified components operate within a temperature range from -55°C to +175°C.
See video transcript below
Video Transcript
If you need a MOSFET that you can rely on and doesn’t mind getting stuck in the high-power trenches with you, then Toshiba’s L-TOGL MOSFETs have your back! These MOSFETs feature a trench structure process called U-MOS X-H to achieve low on-resistance and high-speed switching performance, and their use of a Kelvin source connection helps decrease switching losses. These L-TOGL MOSFETs feature drain voltages of 40V, 60V, and 100V, a gate source voltage of ±20V, and a maximum power dissipation of 750W and maximum current of 400A. The L-TOGL package features gull-wing leads to help manage the thermal stress of intense environments from -55°C to +175°C. These MOSFETs are AEC-Q100 qualified meaning that they are ready to take on any automotive application.
