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Toshiba XPJ Series S-TOGL MOSFETs

Toshiba XPJ Series S-TOGL MOSFETs offer low on-resistance, high current capability, and efficient thermal management. These devices are designed with a compact form, incorporating gull-wing leads and an enlarged thermal pad. The S-TOGL MOSFETs are AEC-Q101 qualified, offer a minimum power dissipation of 223W, and a storage temperature range from -55°C to +175°C. These components feature a 40V drain-source voltage rating and a maximum low leakage current of 10µA. Typical applications include automotive, DC-DC converters, motor drivers, and switching voltage regulators.

Features

AEC-Q101 qualified
Enhanced thermal performance
Gull-wing lead design
Low on-resistance
Provides low leakage current
Silicon N-channel

Applications

Automotive
DC-DC converters
Motor drivers
Switching voltage regulators

Technical Specifications

Parameters	Values
Drain-Source Voltage	40V
Gate-Source Voltage	±20V
Minimum Power Dissipation	223W
Maximum Drain Current	200A
Storage Temperature Range	-55°C to +175°C

Related Product

Toshiba XPQ Series L-TOGL MOSFETs