Toshiba U-MOSIX-H and U-MOSVII-H MOSFETs

Toshiba U-MOSIX-H and U-MOSVII-H MOSFETs feature low drain-source on-resistance and low leakage current. The U-MOSIX-H and U-MOSVII-H MOSFETs offer maximum power dissipation of 306W and 2.5W. These MOSFETs offer operating temperatures ranging from -55°C to +175°C for U-MOSIX-H and -55°C to +150°C for U-MOSVII-H. Typical applications include high-efficiency DC-DC converters, switching voltage regulators, motor drivers, mobile devices, load switches, IoT devices, and high-speed switching.

Features

• Comes with a small gate charger and a small output charger
• Enhancement mode
• High-speed switching
• Offer different voltage type drivers: logic-level gate driver and low-voltage gate driver
• Polarity N-channel
• Support low drain-source on-resistance and low leakage current

Applications

• High-efficiency DC-DC Converters
• High-speed switching
• IoT devices
• Load switches
• Mobile devices
• Motor Drivers
• Switching voltage regulators

Technical Specifications