Toshiba TRS Series SiC Schottky Barrier Diodes

Toshiba TRS Series SiC Schottky Barrier Diodes are unipolar devices that exhibit minimal reverse recovery time and temperature-independent switching behavior, making them superior replacements for Si fast-recovery diodes (FRDs) to enhance power supply efficiency. These diodes offer large non-repetitive peak forward surge current, low total capacitive charge, low forward voltage, and low reverse current. The TRS SiC diodes have a product line that includes five package options: isolation type TO-220F-2L, non-isolation type TO-220-2L, non-isolation type TO-247, TO-247-2L, and DFN8x8, providing versatility to meet diverse application needs. These diodes are useful in photovoltaic inverters, uninterruptible power supplies, and solar converters.

Features

  • Comes in various packages to suit diverse needs
  • Complies with RoHS standards for environmental responsibility
  • Guards against powerful surges in electronics
  • Large non-repetitive peak forward surge current
  • Low forward voltage reduces energy consumption
  • Minimized total capacitive charge for enhanced efficiency
  • Negligible reverse current safeguards sensitive electronics
  • Versatile and effective for a range of applications
  • Boosts system efficiency, saving energy
  • Tailored options available for different scenarios

Applications

  • DC-DC converters
  • Photovoltaic inverters
  • Power factor correction circuits
  • Solar converters
  • Uninterruptible power supplies

Technical Specifications

Parameters Package/Case
DFN8x8 TO-220-2L TO-220F-2L TO-247-2L TO-247
Forward DC current 4A to 12A 2A to 12A 4A to 12A 10A to 40A 12A to 40A
Non-repetitive peak forward surge current 28A to 60A 19A to 97A 37A to 92A 80A to 270A 52A to 135A
Maximum forward voltage 1.35V 1.35V to 1.6V 1.6V 1.45V 1.45V to 1.6V
Maximum reverse current 55μA to 120μA 20μA to 120μA 20μA to 60μA 80μA to 230μA 30μA to 130μA
Repetitive peak reverse voltage 650V 1200V 650V to 1200V