Toshiba TRS SiC Schottky Barrier Diodes

Toshiba TRS SiC Schottky Barrier Diodes are unipolar devices with minimal reverse recovery time and temperature-independent switching behavior. These diodes can replace Si Fast-Recovery Diodes (FRDs) to enhance power supply efficiency. The TRS diodes offer large non-repetitive peak forward surge current, low total capacitive charge, low forward voltage, and low reverse current. TRS SiC schottky barrier diodes have a product line that includes five package options: isolation type TO-220F-2L, non-isolation type TO-220-2L, non-isolation type TO-247, TO-247-2L, and DFN8x8, providing versatility to meet diverse application needs. These diodes are used in photovoltaic inverters, Uninterruptible Power Supply (UPS), and solar converters.

Features

• Comes in various packages to suit diverse needs
• Complies with RoHS standards for environmental responsibility
  
• Guards against powerful surges in electronics
• Large non-repetitive peak forward surge current
• Low forward voltage reduces energy consumption
  
• Minimized total capacitive charge for enhanced efficiency
• Negligible reverse current safeguards sensitive electronics
• Versatile and effective for a range of applications
• Tailored options available for different scenarios

Applications

• DC/DC converters
• Photovoltaic inverters
• Power factor correction circuits
• Solar converters
• UPS

Technical Specifications