Toshiba DTMOSIV Ultra-Low RDS(ON) MOSFETs

Toshiba DTMOSIV Ultra-Low RDS(ON) MOSFETs feature a cutting-edge single epitaxial technique that results in a 30% drop in RDS(ON), a figure of merit (FOM) for MOSFETs. These devices offer ultra-low on-resistance ratings without power loss penalties. The DTMOSIV employs the TOLL package, which features a Kelvin connection for the signal source terminal. These superjunction MOSFETs come with 600V in a TO-220SIS package with an RDS(ON) of just 0.065Ω, or a similar device in a TO-247 package with an RDS(ON) down to 0.04Ω. The DTMOSIV Ultra-Low RDS(ON) MOSFETs are ideal switching devices for switching power supplies, photovoltaic inverters, adaptors, microinverters, and other power applications.

Features

• Easier visual inspection
• Enhances switching performance
• High gating speeds
• High-efficiency
• High-speed switching circuitry
• Increases mounting reliability
• Low EMI noise
• Optimized gate-drain capacitance
• Proper solder connections
• RoHS complaint
• Super junction structure

Applications

• Adaptors
• Data centers
• Micro inverters
• Photovoltaic inverters
• Switching power supplies
• Uninterruptible power systems

Technical Specifications