Toshiba Discrete Insulated Gate Bipolar Transistors (IGBTs) effectively switch power between the collector and emitter by controlling the voltage between the gate and emitter, similar to MOSFETs. The discrete IGBTs support collector-emitter voltage range from 300V to 800V and DC range from 5A to 80A. These IGBTs contribute to energy efficiency in various applications, including induction heating cooking equipment, rice cookers, kitchen microwaves, refrigerators, washing machines, and air conditioners.
Toshiba Discrete IGBTs
Features
- Comparable to MOSFETs in gate-emitter voltage control
- Handles DC current range from 5A to 80A
- Low radiated emissions
- More effective than silicon MOSFETs for high voltage and current control
- Supports collector-emitter voltages from 300V to 800V
Applications
- Induction heating
- Inverters
- Small and large appliances