650V GaN FET Technology
Nexperia 650V GaN FET Technology delivers the lowest Rds(on) (source-drain on-state resistance) for higher voltages and a significantly better switching FOM (Figure of Merit) within automotive applications. 650V GaN FET technology has shown that it offers the best possible efficiency and delivers the robustness of operation at high voltages and high temperatures, as well as quality, reliability, and scalability in manufacturing.