Littelfuse IXYS Silicon Carbide (SiC) MOSFETs provide high efficiency and performance for power electronics. These devices feature low gate charge, output capacitance, and gate resistance, enabling high-frequency switching. The SiC MOSFETs operate in normally-off mode across all temperatures, ensuring safe and reliable performance. The specifications include a 1200V drain-source voltage, 80mΩ typical RDS(ON), and 25A current at 25°C. These MOSFETs are suitable for solar inverters, motor drives, UPS, high-frequency circuits, and battery chargers.
IXYS Silicon Carbide MOSFETs
Features
- 25A current capability at 25°C
- 80mΩ typical RDS(ON)
- 1200V drain-source voltage
- Extremely low gate charge
- Low gate resistance
- Normally-off operation
- Optimized design for high efficiency
Applications
- Battery chargers
- High-frequency devices
- High voltage DC/DC converters
- Induction heating
- Motor drives
- Solar inverters
- Switch mode power supplies
- UPS systems