IXYS IXS SiC MOSFETs
IXYS/Littelfuse IXS SiC MOSFETs are designed for high-voltage systems. These devices support fast switching and high efficiency due to low output capacitance and minimal reverse recovery charge. The IXS SiC MOSFETs feature a drain-source voltage of 1200V and a maximum drain-source leakage current of 100μA. These devices come with a storage temperature range from -55°C to +175°C and a peak drain current range from 102A to 198A. Applications include solar inverters, motor drives, DC/DC converters, UPS systems, and electric vehicle charging.
Features
- Excellent thermal performance
- Fast reverse recovery characteristics
- Fast switching with low capacitance
- High blocking voltage with low on-state resistance
- High maximum junction temperature capability
- High power dissipation capability
- Integrated Kelvin source contact for precise gate control
- SiC MOSFET technology for enhanced efficiency and performance
- Ultra-fast intrinsic body diode
- Wide gate drive voltage range
Applications
- DC/DC converters
- EV charging infrastructure
- Induction heating
- Motor drives
- Solar inverters
- Switch-mode power supplies
- Uninterruptible Power Supply (UPS)
Technical Specifications
| Parameters | Values |
|---|---|
| Drain-Source Voltage | 1200V |
| Maximum Drain-Source Leakage Current | 100μA |
| Maximum Gate Leakage Current | ±100nA |
| Total Power Dissipation Range | 250W to 395W |
| Peak Drain Current Range | 102A to 198A |
Video
This TTI Tech Specs video for Littelfuse IXS SiC MOSFETs showcases the device’s key technical specifications and performance advantages. The presentation explains how silicon-carbide technology delivers higher efficiency, reduced power losses, and superior thermal handling, making these MOSFETs well-suited for high-demand applications.
See video transcript below
Video Transcript
If you are “sick” of IGBT losses and want to learn how to be cool, then you are probably going to find your solution in the SiC-est devices. LittleFuse IXS Silicon Carbide MOSFETs provide your high-power designs with drain-to-source blocking voltages of up to 1200V, a maximum drain current of 79A, and an RDSon of no more than 30mΩ. Supporting gate drive voltages of -5V to 15V and 18V and the inclusion of a Kelvin source contact, engineers are presented with optimized gate control and gate circuit design flexibility. The operating temperature range of -55°C to +175°C really demonstrates the thermal advantage of silicon carbide, while the MSL 1 rating means that these devices are extremely resistant to moisture. Being suitable for numerous high-power applications, including solar inverters, switch-mode power supplies, motor drivers, and induction heating, there is no power play they can’t execute.
