IXYS IX4351NE Series Gate Drivers are designed to drive SiC MOSFETs and high-power IGBTs. These gate drivers feature separate 9A peak source and sink outputs for optimized switching performance. The integrated charge pump regulator allows selectable negative gate drive bias for improved control. The IX4351NE gate drivers operate within a voltage range from -10V to +25V and offers under-voltage lockout, thermal shutdown, and fault signaling for safety. These devices are ideal for motor controllers, DC-DC converters, power inverters, and electric vehicle charging stations.
IXYS IX4351NE Series Gate Drivers
Features
- -10V to +25V voltage range
- 9A peak source and sink outputs
- 16-pin SOIC package for thermal management
- Charge pump for negative gate drive
- Desaturation detection with soft shutdown
- Open drain FAULT output signaling
- Thermal shutdown protection
- TTL and CMOS compatible input
- UVLO for safe operation
Applications
- DC-DC converters
- Electric vehicle charging stations
- Motor controllers
- On-board chargers
- Power inverters