Littelfuse IXYS IGBT modules ensure high efficiency and fast switching by combining the MOSFET gate-control structure with the high current and low saturation voltage characteristics of BJTs. Littelfuse/IXYS discrete IGBTs combine the strengths of a MOSFET and an IGBT. They have a positive temperature coefficient of Vce(sat) and Vf and feature low conduction losses making them ideal solutions for high frequency, high power density applications.
IXYS IGBT Modules
Features
- Pressure Contact IGBTs offer voltage ratings from 1.7kV to 6.5kV and current ratings from 115A to 3kA.
- Ultra-low and compact package profiles available
- Surface mountable via standard reflow process
- Low package weight
- Up to 4500V ceramic isolation (DCB)
- High current handling capability
- MOS Gate turn-on - drive simplicity
Applications
- AC Motor Controls
- Battery chargers
- Switching and resonant power supplies
- DC choppers
- DC-DC converters
- Temperature and Lighting controls
- Motor drives
- E-bikes and electric and hybrid vehicles
- Solar inverters
- Induction heaters