Bourns BID Series IGBTs
Bourns BID Series Insulated Gate Bipolar Transistors (IGBTs) discrete solution devices use advanced Trench-Gate Field-Stop technology. These IGBTs provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, due to the thermally efficient TO-252, TO-247, and TO-247N packages, these devices can provide a lower thermal resistance RTH(j-c). Typical applications include Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC).
Features
- Advanced Trench-Gate Field-Stop (TGFS) technology
- Discrete IGBT co-packed with Fast Recovery Diode (FRD)
- Low saturation voltage drop (VCE(sat))
- Low switching loss
- Optimized for conduction
- Qualified according to JEDEC standards for power-switching products
- Robust and RoHS-compliant
- TO-252, TO-247 and TO-247N packages
- Trench-Gate Field-Stop technology
Applications
- Inverters
- PFC (Power Factor Correction)
- SMPS (Switched Mode Power Supply)
- Stepper motors
- UPS (Uninterruptible Power Supply)
Technical Specifications
| Part number | Package | VCE (V) |
IC at T=100˚C (A) |
Typ. VCE(sat) at Ic, Vge=15V (V) |
IF at T=100˚C (A) |
Operating junction temperature (°C) |
Datasheet (PDF) |
|---|---|---|---|---|---|---|---|
| BIDD05N60T | TO-252 | 600 | 5 | 1.5 | N/A | –55 to +150 | BIDD05N60T |
| BIDW20N60T | TO-247 | 600 | 20 | 1.7 | 20 | –55 to +150 | BIDW20N60T |
| BIDW30N60T | TO-247 | 600 | 30 | 1.65 | 30 | –55 to +150 | BIDW30N60T |
| BIDW50N65T | TO-247 | 650 | 50 | 1.65 | 50 | –55 to +150 | BIDW50N65T |
| BIDNW30N60H3 |
TO-247N | 600 | 30 | 1.65 | 12 | –55 to +150 | BIDNW30N60H3 |
Video
This TTI Tech Specs video for the Bourns BID series of discrete IGBTs explains that they are co-packed with a fast-recovery diode and use advanced Trench-Gate Field-Stop technology that improves control of dynamic characteristics. They are optimized for conduction, with lower VCESAT and lower losses.
Read video transcript below
Video Transcript
IGBT, TGFS, FRD, VCE, and RTH might just sound like alphabet soup to the layperson, and even to some engineers, but if you’re working in power conversion, then you should know what those all mean so you can add one more: BID. Bourns BID series of discrete IGBTs are co-packed with a fast-recovery diode and use advanced Trench-Gate Field-Stop technology that improves control of dynamic characteristics.
They’re optimized for conduction, with lower VCESAT and lower losses. The TGFS structure improves robustness and lowers thermal resistance, and the series is offered in the thermally efficient TO-252 and TO-247 packages, enabling operating junction temperatures up to 150°C. The BID series includes IGBTs with ratings up to 650V and 50A, making them ideal for inverters, PFC circuits, switched-mode power supplies, stepper motors, and UPS applications.
