Reference Only

PSMN7R8-120ESQ

End of Life
MOSFETs N-channel 120 V 7.9 mo FET

Manufacturer:

Mfr Part:
PSMN7R8-120ESQ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseI2PAK-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage120 V
Id - Continuous Drain Current70 A
Rds On - Drain-Source Resistance6.72 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge167 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation349 W
PackagingTube
ConfigurationSingle
Fall Time60.8 ns
Product TypeMOSFETs
Rise Time55.3 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time151.8 ns
Typical Turn-On Delay Time45.5 ns
Part # Aliases934067449127

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290055
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Tube

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