Reference Only

PDTA123YQBZ

Bipolar Transistors - BJT 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ

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Mfr Part:
PDTA123YQBZ

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Not Assigned

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Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage150 mV
Pd - Power Dissipation420 mW
Gain Bandwidth Product fT180 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
DC Collector/Base Gain hfe Min35 at -5 mA, -5 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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