Reference Only

PBSS3515VS,115

End of Life
Bipolar Transistors - BJT

Manufacturer:

Mfr Part:
PBSS3515VS,115

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
Collector- Base Voltage VCBO15 V
Collector-Emitter Saturation Voltage250 mV
Collector- Emitter Voltage VCEO Max15 V
ConfigurationDual
DC Collector/Base Gain hfe Min200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 90 at 500 mA, 2 V
DC Current Gain hFE Max200 at 10 mA, 2 V
Emitter- Base Voltage VEBO6 V
Gain Bandwidth Product fT280 MHz
Maximum DC Collector Current500 mA
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleSMD/SMT
PackagingReel
Package / CaseSOT-666-6
Pd - Power Dissipation300 mW
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
TechnologySi
Transistor PolarityPNP
Part # Aliases934056767115

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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