Reference Only

NSF080120L4A0Q

SiC MOSFETs .

Manufacturer:

Mfr Part:
NSF080120L4A0Q

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance120 mOhms
Vgs - Gate-Source Voltage- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage2.9 V
Qg - Gate Charge52 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation183 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min9 S
Product TypeSiC MOSFETS
Rise Time13 ns
SubcategoryTransistors
TechnologySiC
Typical Turn-Off Delay Time14 ns
Typical Turn-On Delay Time13 ns
Part # Aliases934665930127

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 16 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Each

(Minimum: 450 / Multiples: 1)
Quantity Unit PriceExt. Price
$8.41$3,784.50
$6.36$3,243.60
$6.08$6,201.60
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