Reference Only
NP100T12P2T3Z
End of Life
IGBT Modules The factory is currently not accepting orders for this product.
Datasheet
NP100T12P2T3Z DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Nexperia | |
| Product Category | IGBT Modules | |
| Product | IGBT Modules | |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| Collector-Emitter Saturation Voltage | 1.65 V | |
| Continuous Collector Current at 25 C | 100 A | |
| Gate-Emitter Leakage Current | 500 nA | |
| Pd - Power Dissipation | 20 mW | |
| Package / Case | NP2-35P | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 150 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Style | Screw Mount | |
| Product Type | IGBT Modules | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Part # Aliases | 935691636333 |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541210095 |
| TARIC | 8541210000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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