Reference Only
GANE3R9-150QBAZ
GaN FETs .
Datasheet
GANE3R9-150QBAZ DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Nexperia | |
| Product Category | GaN FETs | |
| Mounting Style | SMD/SMT | |
| Package / Case | VQFN-7 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 150 V | |
| Id - Continuous Drain Current | 100 A | |
| Rds On - Drain-Source Resistance | 3.9 mOhms | |
| Vgs - Gate-Source Voltage | - 4 V, + 6 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V | |
| Qg - Gate Charge | 20 nC | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 65 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Moisture Sensitive | Yes | |
| Packaging | Reel | |
| Product Type | GaN FETs | |
| Subcategory | Transistors | |
| Technology | GaN | |
| Part # Aliases | 934667633332 |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 16 Weeks
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 2,500 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $4.00 | $10,000.00 |
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