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GANE350-650FBAZ

New Product
GaN FETs .

Manufacturer:

Mfr Part:
GANE350-650FBAZ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseDFN-5
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance350 mOhms
Vgs - Gate-Source Voltage7 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge1.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation65 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time6.1 ns
Maximum Drain Gate Voltage40 V
Moisture SensitiveYes
PackagingReel
Product TypeGaN FETs
ProductGaN FETs
Rise Time3.5 ns
SubcategoryTransistors
TechnologyGaN
Transistor Type1 P-Channel
Typical Turn-Off Delay Time1.2 ns
Typical Turn-On Delay Time0.9 ns
Part # Aliases934667638332

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 16 Weeks
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Reel

(Minimum: 2,500 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.713$1,782.50
$0.687$3,435.00
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