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GANE190-700BBAZ

New Product
GaN FETs .

Manufacturer:

Mfr Part:
GANE190-700BBAZ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage700 V
Id - Continuous Drain Current11.5 A
Rds On - Drain-Source Resistance190 mOhms
Vgs - Gate-Source Voltage7 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge2.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation84 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time4 ns
Moisture SensitiveYes
PackagingReel
Product TypeGaN FETs
ProductGaN FETs
Rise Time4 ns
SubcategoryTransistors
TechnologyGaN
Transistor Type1 P-Channel
Typical Turn-Off Delay Time1.7 ns
Typical Turn-On Delay Time1.4 ns
Part # Aliases934667672332

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 16 Weeks
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(Minimum: 2,500 / Multiples: 1)
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$1.18$2,950.00
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