Reference Only

GANC050-650WSHQ

New Product
GaN FETs .

Manufacturer:

Mfr Part:
GANC050-650WSHQ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryGaN FETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current32 A
Rds On - Drain-Source Resistance60 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge31 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation104 W
Channel ModeEnhancement
TechnologyGaN
ConfigurationSingle
Fall Time9 ns
Product TypeGaN FETs
ProductGaN FETs
Rise Time8 ns
SubcategoryTransistors
Transistor Type1 N-Channel
TypeGaN FET
Typical Turn-Off Delay Time84 ns
Typical Turn-On Delay Time66 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 25 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Each

(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
$3.57$1,071.00
$3.34$1,670.00
$3.33$8,325.00
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