Reference Only

GAN111-650WSBQ

New Product
GaN FETs The factory is currently not accepting orders for this product..

Manufacturer:

Mfr Part:
GAN111-650WSBQ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryGaN FETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current21 A
Rds On - Drain-Source Resistance97 mOhms
Vgs - Gate-Source Voltage+ 20 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge4.9 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation107 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time8 ns
Product TypeGaN FETs
ProductGaN FETs
Rise Time12 ns
SubcategoryTransistors
TechnologyGaN
Transistor Type1 N-Channel
TypeGallium Nitride FET
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time13 ns
Part # Aliases934666222127

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 16 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Each

(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
$7.68$2,304.00
Need more?