Reference Only
GAN111-650WSBQ
New Product
GaN FETs The factory is currently not accepting orders for this product..
Datasheet
GAN111-650WSBQ DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Nexperia | |
| Product Category | GaN FETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 21 A | |
| Rds On - Drain-Source Resistance | 97 mOhms | |
| Vgs - Gate-Source Voltage | + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 4.8 V | |
| Qg - Gate Charge | 4.9 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 107 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 8 ns | |
| Product Type | GaN FETs | |
| Product | GaN FETs | |
| Rise Time | 12 ns | |
| Subcategory | Transistors | |
| Technology | GaN | |
| Transistor Type | 1 N-Channel | |
| Type | Gallium Nitride FET | |
| Typical Turn-Off Delay Time | 20 ns | |
| Typical Turn-On Delay Time | 13 ns | |
| Part # Aliases | 934666222127 |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 16 Weeks
Quantity
---
Unit Price
---
Ext. Price
---
Each
(Minimum: 300 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $7.68 | $2,304.00 |
Need more?