Reference Only

GAN039-650NTBJ

GaN FETs .

Manufacturer:

Mfr Part:
GAN039-650NTBJ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseCCPAK1212i-12
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current58.5 A
Rds On - Drain-Source Resistance33 mOhms
Vgs - Gate-Source Voltage+ 20 V
Vgs th - Gate-Source Threshold Voltage4.6 V
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time9 ns
PackagingReel
Product TypeGaN FETs
ProductGaN FETs
Rise Time10 ns
SubcategoryTransistors
TechnologyGaN
Transistor Type1 N-Channel
TypeGallium Nitride FET
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time17 ns
Part # Aliases934662153118

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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