Reference Only

GAN039-650NBBHP

GaN FETs .

Manufacturer:

Mfr Part:
GAN039-650NBBHP

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseCCPAK1212-13
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance39 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge30 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
ConfigurationCascode
PackagingReel
Product TypeGaN FETs
SubcategoryTransistors
TechnologyGaN
Transistor TypeGaN HEMT
Part # Aliases934662151128

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 16 Weeks
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Reel

(Minimum: 1,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$7.22$7,220.00
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