Reference Only
XP83T03GJB
End of Life
MOSFETs N-CH 30V 75A TO-251S
Datasheet
XP83T03GJB DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | YAGEO | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-251S-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Id - Continuous Drain Current | 75 A | |
| Rds On - Drain-Source Resistance | 6 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| Qg - Gate Charge | 21 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 60 W | |
| Channel Mode | Enhancement | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 14 ns | |
| Forward Transconductance - Min | 55 S | |
| Product Type | MOSFETs | |
| Rise Time | 86 ns | |
| Series | XP | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 24 ns | |
| Typical Turn-On Delay Time | 9.5 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Taiwan (China) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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