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XP6NA1R4CXT

MOSFETs N-CH 60V 44.6 A PMPAK-5x6X

Manufacturer:

Mfr Part:
XP6NA1R4CXT

TTI Part:
XP6NA1R4CXT

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePMPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current210 A
Rds On - Drain-Source Resistance1.45 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge122 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time91 ns
Forward Transconductance - Min82 S
Product TypeMOSFETs
Rise Time62 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time93 ns
Typical Turn-On Delay Time29 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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