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XP65SL190DI

MOSFETs N-CH 650V 20A TO-220CFM

Manufacturer:

Mfr Part:
XP65SL190DI

TTI Part:
XP65SL190DI

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220CFM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance190 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge58 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.92 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time16 ns
Forward Transconductance - Min12 S
Product TypeMOSFETs
Rise Time19 ns
SeriesXP
SubcategoryTransistors
Transistor TypeN-Channel
Typical Turn-Off Delay Time57 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

3,000In Stock

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$1.22$1,220.00
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