Reference Only

XP60SL115DR

MOSFETs N-CH 600V 28A TO-262

Manufacturer:

Mfr Part:
XP60SL115DR

TTI Part:
XP60SL115DR

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-262-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current28 A
Rds On - Drain-Source Resistance115 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge91 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time31 ns
Forward Transconductance - Min21 S
Product TypeMOSFETs
Rise Time34 ns
SeriesXP
SubcategoryTransistors
Transistor TypeN-Channel
Typical Turn-Off Delay Time89 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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