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XP60AN750IN

End of Life
MOSFETs N-CH 600V 10A TO-220CFM-NL

Manufacturer:

Mfr Part:
XP60AN750IN

TTI Part:
XP60AN750IN

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220CFM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance750 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge37 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.92 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time33 ns
Forward Transconductance - Min15 S
Product TypeMOSFETs
Rise Time24 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time48 ns
Typical Turn-On Delay Time13 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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NCNR - Cannot be cancelled or returned.

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